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A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)
- Source :
- Appl. Phys. Lett. 101, 212102 (2012)
- Publication Year :
- 2012
-
Abstract
- Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value (3.03). The electronic structure of NiYBi was calculated using WIEN2k and a narrow indirect band gap of width 210 meV was found. The valence band spectra of the films obtained by linear dichroism in hard X-ray photoelectron spectroscopy exhibit clear structures that are in good agreement with the calculated band structure of NiYBi.
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Appl. Phys. Lett. 101, 212102 (2012)
- Publication Type :
- Report
- Accession number :
- edsarx.1209.5707
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1063/1.4764520