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Robust formation of skyrmions and topological Hall effect in epitaxial thin films of MnSi

Authors :
Li, Yufan
Kanazawa, N.
Yu, X. Z.
Tsukazaki, A.
Kawasaki, M.
Ichikawa, M.
Jin, X. F.
Kagawa, F.
Tokura, Y.
Publication Year :
2012

Abstract

Magneto-transport properties have been investigated for epitaxial thin films of B20-type MnSi grown on Si(111) substrates. Both Lorentz transmission electron microscopy (TEM) images and topological Hall effect (THE) clearly point to the robust formation of skyrmions over a wide temperature-magnetic field region. New features distinct from those of bulk MnSi are observed for epitaxial MnSi films: a shorter (nearly half) period of the spin helix and skyrmions, and an opposite sign of THE. These observations suggest versatile features of skyrmion-induced THE beyond the current understanding.

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.1209.4480
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevLett.110.117202