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Optical study of superconducting Ga-rich layers in silicon
- Source :
- Phys. Rev. B 87, 014502 (2013)
- Publication Year :
- 2012
-
Abstract
- We performed phase-sensitive terahertz (0.12 - 1.2 THz) transmission measurements of Ga-enriched layers in silicon. Below the superconducting transition, T_{c} = 6.7 K, we find clear signatures of the formation of a superconducting condensate and of the opening of an energy gap in the optical spectra. The London penetration depth, \lambda(T), and the condensate density, n_{s} = \lambda^{2} 0)/\lambda^{2}(T), as functions of temperature demonstrate behavior, typical for conventional superconductors with \lambda(0) = 1.8 \mu m. The terahertz spectra can be well described within the framework of Eliashberg theory with strong electron-phonon coupling: the zero-temperature energy gap is 2\Delta(0) = 2.64 meV and 2\Delta(0)/k_{B}T_{c} = 4.6 \pm 0.1, consistent with the amorphous state of Ga. At temperatures just above T_{c}, the optical spectra demonstrate Drude behavior.<br />Comment: 5 pages, 4 figures
- Subjects :
- Condensed Matter - Superconductivity
Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. B 87, 014502 (2013)
- Publication Type :
- Report
- Accession number :
- edsarx.1206.2515
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevB.87.014502