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The Refractive Index of Silicon at Gamma Ray Energies
- Publication Year :
- 2011
-
Abstract
- The index of refraction n(E_{\gamma})=1+\delta(E_{\gamma})+i\beta(E_{\gamma}) is split into a real part \delta and an absorptive part \beta. The absorptive part has the three well-known contributions to the cross section \sigma_{abs}: the photo effect, the Compton effect and the pair creation, but there is also the inelastic Delbr\"uck scattering. Second-order elastic scattering cross sections \sigma_{sca} with Rayleigh scattering (virtual photo effect), virtual Compton effect and Delbr\"uck scattering (virtual pair creation) can be calculated by integrals of the Kramers-Kronig dispersion relations from the cross section \sigma_{abs}. The real elastic scattering amplitudes are proportional to the refractive indices \delta_{photo}, \delta_{Compton} and \delta_{pair}. While for X-rays the negative \delta_{photo} dominates, we show for the first time experimentally and theoretically that the positive \delta_{pair} dominates for \gamma rays, opening a new era of \gamma optics applications, i.e. of nuclear photonics.<br />Comment: 4 pages, 3 figures
- Subjects :
- Physics - Atomic Physics
Physics - Optics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.1111.3608
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevLett.108.184802