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The Refractive Index of Silicon at Gamma Ray Energies

Authors :
Habs, D.
Günther, M. M
Jentschel, M.
Urban, W.
Publication Year :
2011

Abstract

The index of refraction n(E_{\gamma})=1+\delta(E_{\gamma})+i\beta(E_{\gamma}) is split into a real part \delta and an absorptive part \beta. The absorptive part has the three well-known contributions to the cross section \sigma_{abs}: the photo effect, the Compton effect and the pair creation, but there is also the inelastic Delbr\"uck scattering. Second-order elastic scattering cross sections \sigma_{sca} with Rayleigh scattering (virtual photo effect), virtual Compton effect and Delbr\"uck scattering (virtual pair creation) can be calculated by integrals of the Kramers-Kronig dispersion relations from the cross section \sigma_{abs}. The real elastic scattering amplitudes are proportional to the refractive indices \delta_{photo}, \delta_{Compton} and \delta_{pair}. While for X-rays the negative \delta_{photo} dominates, we show for the first time experimentally and theoretically that the positive \delta_{pair} dominates for \gamma rays, opening a new era of \gamma optics applications, i.e. of nuclear photonics.<br />Comment: 4 pages, 3 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.1111.3608
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevLett.108.184802