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Single Crystal Growth of Ga2(SexTe1-x)3 Semiconductors and Defect Studies via Positron Annihilation Spectroscopy
- Publication Year :
- 2011
-
Abstract
- Small single crystals of Ga2(SexTe1-x)3 semiconductors, for x = 0.1, 0.2, 0.3, were obtained via modified Bridgman growth techniques. High-resolution powder x-ray diffractometry confirms a zincblende cubic structure, with additional satellite peaks observed near the (111) Bragg line. This suggests the presence of ordered vacancy planes along the [111] direction that have been previously observed in Ga2Te3. Defect studies via positron annihilation spectroscopy show an average positron lifetime of ~400 ps in bulk as-grown specimens. Such a large lifetime suggests that the positron annihilation sites in these materials are dominated by defects. Moreover, analyzing the electron momenta via coincidence Doppler broadening measurements suggests a strong presence of large open-volume defects, likely to be vacancy clusters or voids.<br />Comment: 4 pages, 5 figures
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.1109.1721
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2012.02.011