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Spin excitations of the correlated semiconductor FeSi probed by THz radiation

Authors :
Glushkov, V. V.
Gorshunov, B. P.
Zhukova, E. S.
Demishev, S. V.
Pronin, A. A.
Sluchanko, N. E.
Kaiser, S.
Dressel, M.
Publication Year :
2011

Abstract

By direct measurements of the complex optical conductivity $\sigma(\nu)$ of FeSi we have discovered a broad absorption peak centered at frequency $\nu_{0}(4.2 K) \approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of $H_{e}=34\pm 6 T$. Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.<br />Comment: 5 pages, 4 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.1106.0651
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevB.84.073108