Molecular dynamics simulations of oxide memristors: thermal effects

Authors :: Savel'ev, S. E.
Alexandrov, A. S.
Bratkovsky, A. M.
Williams, R. Stanley
Source :: Applied Physics A: Materials Science & Processing (2011) Volume 102, Number 4, 891
Publication Year :: 2010
Abstract: We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.<br />Comment: submit/0169777; 6 pages, 4 figures

Subjects :: Condensed Matter - Mesoscale and Nanoscale Physics
Quantum Physics

Database :: arXiv
Journal :: Applied Physics A: Materials Science & Processing (2011) Volume 102, Number 4, 891
Publication Type :: Report
Accession number :: edsarx.1012.5514
Document Type :: Working Paper
Full Text :: https://doi.org/10.1007/s00339-011-6293-4