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Molecular dynamics simulations of oxide memristors: thermal effects

Authors :
Savel'ev, S. E.
Alexandrov, A. S.
Bratkovsky, A. M.
Williams, R. Stanley
Source :
Applied Physics A: Materials Science & Processing (2011) Volume 102, Number 4, 891
Publication Year :
2010

Abstract

We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.<br />Comment: submit/0169777; 6 pages, 4 figures

Details

Database :
arXiv
Journal :
Applied Physics A: Materials Science & Processing (2011) Volume 102, Number 4, 891
Publication Type :
Report
Accession number :
edsarx.1012.5514
Document Type :
Working Paper
Full Text :
https://doi.org/10.1007/s00339-011-6293-4