A New Strained-Silicon Channel Trench-gate Power MOSFET: Design and Analysis

MLA

Saxena, Raghvendra S., and M.Jagadesh Kumar. A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis. 2010. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.1008.3019&authtype=sso&custid=ns315887.

APA

Saxena, R. S., & Kumar, M. J. (2010). A New Strained-Silicon Channel Trench-gate Power MOSFET: Design and Analysis.

Chicago

Saxena, Raghvendra S., and M. Jagadesh Kumar. 2010. “A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.1008.3019&authtype=sso&custid=ns315887.