Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions

Authors :: Herranz, D.
Bonell, F.
Gomez-Ibarlucea, A.
Andrieu, S.
Montaigne, F.
Villar1, R.
Tiusan, C.
Aliev, F. G.
Source :: D. Herranz, F. Bonell, A.Gomez-Ibarlucea, S. Andrieu, F. Montaigne, R.Villar1, C.Tiusan , and F.G.Aliev Appl. Phys. Lett. 96, 202501 (2010)
Publication Year :: 2010
Abstract: Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch in epitaxial magnetic tunnel junctions with MgO barriers, notably suppresses both nonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhances tunnelling magnetoresistance (TMR). A comparative study of the room temperature electron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVx MTJs with 0 <= x <= 0.25 reveals that V doping of the bottom electrode for x < 0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic and magnetic 1/f noise. We attribute the enhanced TMR and suppressed 1/f noise to strongly reduced misfit and dislocation density.<br />Comment: 12 pages, 3 figures

Subjects :: Condensed Matter - Materials Science
Condensed Matter - Mesoscale and Nanoscale Physics

Database :: arXiv
Journal :: D. Herranz, F. Bonell, A.Gomez-Ibarlucea, S. Andrieu, F. Montaigne, R.Villar1, C.Tiusan , and F.G.Aliev Appl. Phys. Lett. 96, 202501 (2010)
Publication Type :: Report
Accession number :: edsarx.1007.3941
Document Type :: Working Paper
Full Text :: https://doi.org/10.1063/1.3430064

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