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Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from $K$ edge x-ray magnetic circular dichroism
- Source :
- Physical Review B 81, 235208 (2010)
- Publication Year :
- 2010
-
Abstract
- Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the Mn K edge is more detailed and is strongly concentration-dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition.<br />Comment: 5 figures, to be published in Physical Review B
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Physical Review B 81, 235208 (2010)
- Publication Type :
- Report
- Accession number :
- edsarx.1005.4577
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevB.81.235208