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Intrinsic Room Temperature Ferromagnetism in Boron-doped ZnO

Authors :
Xu, X. G.
Yang, H. L.
Wu, Y.
Zhang, D. L.
Wu, S. Z.
Miao, J.
Jiang, Y.
Publication Year :
2010

Abstract

We report room temperature ferromagnetism in boron-doped ZnO both experimentally and theoretically. The single phase Zn1-xBxO films deposited under high oxygen pressure by pulsed-laser deposition show ferromagnetic behavior at room temperature. The saturation magnetization increases monotonously from 0 to 1.5 emu/cm3 with the increasing of B component x from 0 to 6.8%. The first-principles calculations based on density functional theory demonstrate that the ferromagnetism in B-doped ZnO originates from the induced magnetic moments of oxygen atoms in the nearest neighbor sites to the B-Zn vacancy pair. The calculated total magnetic moment increasing tendency with B component is well consistent with experiments.<br />Comment: 16 pages, 1 table, 4 figures.

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.1003.4423
Document Type :
Working Paper
Full Text :
https://doi.org/10.1063/1.3524493