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4f-derived Fermi Surfaces of CeRu2(Si[1-x]Ge[x])2 near the Quantum Critical Point: Resonant Soft X-ray ARPES Study

Authors :
Okane, T.
Ohkochi, T.
Takeda, Y.
Fujimori, S. -i.
Yasui, A.
Saitoh, Y.
Yamagami, H.
Fujimori, A.
Matsumoto, Y.
Sugi, M.
Kimura, N.
Komatsubara, T.
Aoki, H.
Source :
Phys. Rev. Lett. 102, 216401 (2009)
Publication Year :
2009

Abstract

Angle-resolved photoelectron spectroscopy in the Ce 3d-4f excitation region was measured for the paramagnetic state of CeRu2Si2, CeRu2(Si0.82Ge0.18)2, and LaRu2Si2 to investigate the changes of the 4$f$ electron Fermi surfaces around the quantum critical point. While the difference of the Fermi surfaces between CeRu2Si2 and LaRu2Si2 was experimentally confirmed, a strong 4f-electron character was observed in the band structures and the Fermi surfaces of CeRu2Si2 and CeRu2(Si0.82Ge0.18)2, consequently indicating a delocalized nature of the 4$f$ electrons in both compounds. The absence of Fermi surface reconstruction across the critical composition suggests that SDW quantum criticality is more appropriate than local quantum criticality in CeRu2(Si[1-x]Ge[x])2.<br />Comment: 4 pages, 5 figures

Details

Database :
arXiv
Journal :
Phys. Rev. Lett. 102, 216401 (2009)
Publication Type :
Report
Accession number :
edsarx.0906.3078
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevLett.102.216401