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Al doped graphene: A promising material for hydrogen storage at room temperature

Authors :
Ao, Z. M.
Jiang, Q.
Zhang, R. Q.
Tan, T. T.
Li, S.
Publication Year :
2008

Abstract

A promising material for hydrogen storage at room temperature-Al doped graphene was proposed theoretically by using density functional theory calculation. Hydrogen storage capacity of 5.13 wt% was predicted at T = 300 K and P = 0.1 Gpa with adsorption energy Eb = -0.260 eV/H2. This is close to the target of 6 wt% and satisfies the requirement of immobilization hydrogen with Eb of -0.2 ~ -0.4 eV/H2 at ambient temperature and modest pressure for commercial applications specified by U.S. Department of Energy. It is believed that the doped Al varies the electronic structures of both C and H2. The bands of H2 overlapping with those of Al and C synchronously are the underlying mechanism of hydrogen storage capacity enhancement.<br />Comment: 20 pages, 2 tables, and 5 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.0811.1856
Document Type :
Working Paper
Full Text :
https://doi.org/10.1063/1.3103327