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Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system

Authors :
Kadir, Abdul
Ganguli, Tapas
Kumar, Ravi
Gokhale, M. R.
Shah, A. P.
Arora, B. M.
Bhattacharya, Arnab
Publication Year :
2007

Abstract

From a detailed analysis of InN epilayers deposited in a close-coupled showerhead metalorganic vapour phase epitaxy (MOVPE) system under various conditions we investigate the effect of growth parameters on the lattice constants of the InN layer. The layers are under significant internal hydrostatic stress which influences the optical properties. Samples typically fall into two broad categories of stress, with resultant luminescence emission around 0.8eV and 1.1eV. We can correlate the internal stress in the layer and the value of the optical absorption edge, and the PL emission wavelength.<br />Comment: 4 pages, 2 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.0705.0105
Document Type :
Working Paper