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In₀.₅Ga₀.₅ spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPE

Authors :
Scheffer, F.
Lindner, A.
Heedt, Christian H.
Reuter, Ralf
Liu, Q.
Prost, Werner
Tegude, Franz-Josef
Publication Year :
1994

Subjects

Subjects :
Elektrotechnik

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.unidue...bib..3586bff2eee9933dfd8ef3668ae35fcc

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Authors Abstract Subjects Details