A 0.55V Bandgap reference with a 59ppm/0c Temperature coefficient

This paper presents a novel low power, low voltage CMOS bandgap reference (BGR) that overcomes the problems with existing BJT-based reference circuits, by using a MOS transistor operating in subthreshold region. A proportional to absolute temperature (PTAT) voltage is generated by exploiting the self-bias cascode branch, while a Complementary to Absolute Temperature (CTAT) voltage is generated by using the threshold voltage of the transistor. The proposed circuit is implemented in 65nm CMOS technology. Post-layout simulation results show that the proposed circuit works with a supply voltage of 0.55V, and generates a 286mV reference voltage with a temperature coefficient of 59ppm/°C. The circuit takes 413nA current from 0.55V supply and occupies 0.00986mm2 of active area