Back to Search Start Over

Tunable Ultra-high Aspect Ratio Nanorod Architectures grown on Porous Substrate via Electromigration

Authors :
Mansourian, Ali
Paknejad, Seyed Amir
Wen, Qiannan
Vizcay-Barrena, Gema
Fleck, Roland Alexander
Zayats, Anatoly V.
Mannan, Samjid Hassan
Source :
Scientific Reports, Mansourian, A, Paknejad, S A, Wen, Q, Vizcay-Barrena, G, Fleck, R A, Zayats, A V & Mannan, S H 2016, ' Tunable Ultra-high Aspect Ratio Nanorod Architectures grown on Porous Substrate via Electromigration ', Scientific Reports, vol. 6, 22272 . https://doi.org/10.1038/srep22272
Publication Year :
2016
Publisher :
Nature Publishing Group, 2016.

Abstract

The interplay between porosity and electromigration can be used to manipulate atoms resulting in mass fabrication of nanoscale structures. Electromigration usually results in the accumulation of atoms accompanied by protrusions at the anode and atomic depletion causing voids at the cathode. Here we show that in porous media the pattern of atomic deposition and depletion is altered such that atomic accumulation occurs over the whole surface and not just at the anode. The effect is explained by the interaction between atomic drift due to electric current and local temperature gradients resulting from intense Joule heating at constrictions between grains. Utilizing this effect, a porous silver substrate is used to mass produce free-standing silver nanorods with very high aspect ratios of more than 200 using current densities of the order of 10(8) A/m(2). This simple method results in reproducible formation of shaped nanorods, with independent control over their density and length. Consequently, complex patterns of high quality single crystal nanorods can be formed in-situ with significant advantages over competing methods of nanorod formation for plasmonics, energy storage and sensing applications.

Details

Language :
English
ISSN :
20452322
Volume :
6
Database :
OpenAIRE
Journal :
Scientific Reports
Accession number :
edsair.pmid.dedup....897c8b9a3483d390dfe5c20dc4d82848
Full Text :
https://doi.org/10.1038/srep22272