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Electronic Structure of Quasi-Freestanding WS
- Source :
- ACS applied materialsinterfaces. 13(42)
- Publication Year :
- 2021
-
Abstract
- Growth of 2D materials under ultrahigh-vacuum (UHV) conditions allows for an in situ characterization of samples with direct spectroscopic insight. Heteroepitaxy of transition-metal dichalcogenides (TMDs) in UHV remains a challenge for integration of several different monolayers into new functional systems. In this work, we epitaxially grow lateral WS
Details
- ISSN :
- 19448252
- Volume :
- 13
- Issue :
- 42
- Database :
- OpenAIRE
- Journal :
- ACS applied materialsinterfaces
- Accession number :
- edsair.pmid..........eab1d4566c60f8873166d79420e70aff