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Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS
- Source :
- Nano letters. 17(10)
- Publication Year :
- 2017
-
Abstract
- High quality electrical contact to semiconducting transition metal dichalcogenides (TMDCs) such as MoS
Details
- ISSN :
- 15306992
- Volume :
- 17
- Issue :
- 10
- Database :
- OpenAIRE
- Journal :
- Nano letters
- Accession number :
- edsair.pmid..........d476605cc9beded9e4a84277b45b82a3