Ferroelectric-gated MoSe

Authors :: Qijie, Yan
Jiaxin, Cheng
Weike, Wang
Mengjiao, Sun
Yanling, Yin
Yuehua, Peng
Weichang, Zhou
Dongsheng, Tang
Source :: Journal of physics. Condensed matter : an Institute of Physics journal. 34(47)
Publication Year :: 2022
Abstract: Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe

ISSN :: 1361648X
Volume :: 34
Issue :: 47
Database :: OpenAIRE
Journal :: Journal of physics. Condensed matter : an Institute of Physics journal
Accession number :: edsair.pmid..........92a70b94cb8f85c9328c36d69b7b05b8