Self-protective GaInN-based light-emitting diodes with VO

We presented a new functional GaInN-based light-emitting diode (LED) that is capable of protecting itself from unwanted thermal damage (a so-called self-protective LED). This functionality was achieved by incorporating VO2 nanowires on the LED chip. VO2 nanowires, as metal-insulator transition materials, show a phase transition from insulating to metallic at a characteristic transition temperature. By placing a VO2 nanowire between the n- and p-contacts of an LED, a parallel circuit was formed with the existing diode. As the VO2 nanowire became metal-like at its characteristic temperature, it induced a short-circuit state in the device, protecting the LED from heat damage at elevated temperatures. Details on the self-protective LED were elucidated, from a conceptual description to experimental proof.