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Material-Selective Doping of 2D TMDC through Al
- Source :
- ACS applied materialsinterfaces. 11(45)
- Publication Year :
- 2019
-
Abstract
- For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with high-performance electronic systems, one of the greatest challenges is the realization of doping and comprehension of its mechanisms. Low-temperature atomic layer deposition of aluminum oxide is found to n-dope MoS
Details
- ISSN :
- 19448252
- Volume :
- 11
- Issue :
- 45
- Database :
- OpenAIRE
- Journal :
- ACS applied materialsinterfaces
- Accession number :
- edsair.pmid..........542e164523761e0c165dbc782e2839f4