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Influence of Ultra-Thin Ge₃N₄ Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO₂/Ge Metal-Oxide-Semiconductor Devices
- Source :
- Journal of nanoscience and nanotechnology. 20(2)
- Publication Year :
- 2019
-
Abstract
- We report the effects of the nitride passivation layer on the structural, electrical, and interfacial properties of Ge metal-oxide-semiconductor (MOS) devices with a hafnium oxide (HfO₂) gate dielectric layer deposited on
Details
- ISSN :
- 15334899
- Volume :
- 20
- Issue :
- 2
- Database :
- OpenAIRE
- Journal :
- Journal of nanoscience and nanotechnology
- Accession number :
- edsair.pmid..........2a8c3114ee23b6344f17e68d56d29bf6