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High-speed Si/GeSi hetero-structure Electro Absorption Modulator
- Source :
- Optics express. 26(6)
- Publication Year :
- 2018
-
Abstract
- The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.
Details
- ISSN :
- 10944087
- Volume :
- 26
- Issue :
- 6
- Database :
- OpenAIRE
- Journal :
- Optics express
- Accession number :
- edsair.pmid..........09c13243c8211b5d07709586d70b13f0