Ten Nanometer Scale WO

The fabrication of p-n heterostructures of a metal oxide semiconductor (MOS) showed that a large amount of heterojunction interfaces is one of the key issues in MOS gas sensor research, since it could significantly enhance the sensing performance. Despite considerable progress in this area, fabrication of an ideal p-n heterojunction sensing channel has been challenging because of morphological limitations of synthetic methods in the conventional bottom-up fabrication based on precursor reductions. In this study, a 10 nm scale p-n heterojunction nanochannel was fabricated with ultrasmall grained WO