The Effect of Growth Temperature, Delta-Doping and Barrier Composition on Mobilities in Shallow Algaas-Gaas 2-Dimensional Electron Gases

A series of two-dimensional electron gas (2DEG) structures have been grown with the 2DEG only 28 nm from the surface. The effects of growth temperature and delta-doping density have been investigated, and a comparison has been made between AlAs and Al0.3Ga0.7As barriers. A mobility of 330,000 cm(2) V-1 s(-1) at 4 K has been measured for a shallow 2DEG with an Al0.3Ga0.7As barrier, which is the highest reported for such a structure. Journal of Crystal Growth