Surface modification of Si(111) substrate by iron ion implantation: Growth of a thin beta-FeSi2 layer

The processes in the synthesis of a thin layer of the semiconducting iron silicide (beta-FeSi2) on the surface of a single-crystal Si(111) substrate by implantation of 195 keV Fe ions with a dose of 8×1017 cm–2 are investigated. Using Rutherford backscattering spectrometry, x-ray diffraction and cross-sectional transmission electron microscopy, the structure and the phase composition of the synthesized layers are studied. The infrared transmittance spectra show the absorption at 310 cm–1 as an indication of the initial nucleation of beta-FeSi2 precipitates during the implantation of iron into silicon substrate.