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Investigation of defects in nitrogen implanted n-type ZnO by capacitance spectroscopy and simultaneous optical excitation

Authors :
Schmidt, M.
Ellguth, M.
Lüder, T.
Wenckstern, H.
Pickenhain, R.
Grundmann, M.
Brauer, G.
Skorupa, W.
Helm, M.
Source :
25th International Conference on Defects in Semiconductors (ICDS-25), 20.-24.07.2009, Petersburg, Russia
Publication Year :
2009

Details

Language :
English
Database :
OpenAIRE
Journal :
25th International Conference on Defects in Semiconductors (ICDS-25), 20.-24.07.2009, Petersburg, Russia
Accession number :
edsair.od......4577..bde404069b72d44b0b51ec04292675b2

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