Excess vacancies induced by ion beam implantation into silicon

Authors :: Kögler, R.
Eichhorn, F.
Peeva, A.
Voelskow, M.
Mücklich, A.
Serre, C.
Skorupa, W.
Source :: V th international conference on ion implantation and other applications of ions and electrons, ION2004, June 14-17, 2004, Kazimierz Dolny, Poland
Publication Year :: 2004
Abstract: The process of formation of excess vacancies by ion implantation is explained. Moreover, the simulation of the process, the experimental detection of excess vacancies and their application for defect engineering is described.

Subjects :: Excess vacancies
Positron annihilation spectrometry
Silicon
Ion implantation
Electron microscopy

Language :: English
Database :: OpenAIRE
Journal :: V th international conference on ion implantation and other applications of ions and electrons, ION2004, June 14-17, 2004, Kazimierz Dolny, Poland
Accession number :: edsair.od......4577..5437a046e7139553ee25df50a3dc4fcb

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