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Investigation of the impact of H-related defects in Al2O3 blocking layer of charge-trap memories by atomistic simulations and device physical modeling
- Publication Year :
- 2010
- Publisher :
- IEEE, 2010.
- Subjects :
- modeling and simulations
Non-volatile memories
high-k
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.od......3674..fcc39c11e8df823b2ce7048b2572304a