A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements

Authors :: Padovani, A.
Kaczer, B.
Pesic, M.
Belmonte, A.
Popovici, M.
Nyns, L.
Linten, D.
Afanas'Ev, V. V.
Shlyakhov, I.
Lee, Y.
Park, H.
Larcher, L.
Publication Year :: 2019

Subjects :: defect spectroscopy
metal-insulator-metal (MIM) capacitor
gate leakage
dynamic random-access memory (DRAM)
Capacitance
conductance
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