Influence of TiO2 and AI(2)O(3) on the electrical and microstructural properties of SnO2 ceramics obtained by the Pechini method

Made available in DSpace on 2013-09-27T14:53:04Z (GMT). No. of bitstreams: 1 WOS000254186000005.pdf: 1123945 bytes, checksum: 966c1f464560c2423bd8f09f3f954c24 (MD5) Previous issue date: 2008-01-01 Made available in DSpace on 2013-09-30T19:23:44Z (GMT). No. of bitstreams: 1 WOS000254186000005.pdf: 1123945 bytes, checksum: 966c1f464560c2423bd8f09f3f954c24 (MD5) Previous issue date: 2008-01-01 Submitted by Vitor Silverio Rodrigues (vitorsrodrigues@reitoria.unesp.br) on 2014-05-20T15:34:17Z No. of bitstreams: 1 WOS000254186000005.pdf: 1123945 bytes, checksum: 966c1f464560c2423bd8f09f3f954c24 (MD5) Made available in DSpace on 2014-05-20T15:34:17Z (GMT). No. of bitstreams: 1 WOS000254186000005.pdf: 1123945 bytes, checksum: 966c1f464560c2423bd8f09f3f954c24 (MD5) Previous issue date: 2008-01-01 Tin oxide has wakened up great scientific and technological interest for its potential use in varistors production and as gas sensor. In order to improve the microstructural and electrical properties in SnO2 varistor ceramics, the influence of differents dopants used, like TiO2 and Al2O3, is under research. The effect of TiO2 and Al2O3 on the properties of Sn-Co-Nb varistor systems obtained by the Pechini method has been investigated in this work. Characterization of synthesized raw material was performed by X-Ray Diffraction (XRD) and Scanning Electronic Microscopy (SEM). The microstructural and electrical characterization of sintered samples show that the TiO2 favors the grain growth and the Al2O3 contributes to the decrease it, effect that is manifested in the Sn-Co-Nb varistor systems. Breakdown field increase up to 6300V/cm with increasing Al2O3 content and non-linear coefficients with alpha=22 were obtained. Univ Cauca, Popayan Cauca, Colombia Univ Estadual Paulista, LIEC, Inst Quim, Araraquara, Brazil CSIC, Inst Ceram & Vidrio, Dpto Electroceram, E-28049 Madrid, Spain Univ Estadual Paulista, LIEC, Inst Quim, Araraquara, Brazil