Harmonic Distortion in Symmetric and Asymmetric Self-Cascodes of UTBB FD SOI Planar MOSFETs

This paper presents an analysis of the harmonic distortion extracted from simulated results of symmetric and asymmetric self-cascode devices (S-SC and A-SC, respectively) composed by ultra-thin body and BOX fully depleted silicon-on-insulator planar MOSFETs 28 nm technological node. The results show that the A-SC effectively increases the operating drain current range for lower distortion. Comparisons with the literature show that the A-SC structures are a promising option for enhancing the circuit design flexibility for advanced MOSFETs.