High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature

Authors :: Terekhin, M.A.
Svechnikov, N.Yu.
Tanaka, S.
Hirose, S.
Kamada, M.
Publication Year :: 1997
Publisher :: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України, 1997.
Abstract: The effect of VUV undulator excitation intensity on the emission shape and decay time of BaF₂ crystal at low temperature has been observed. The findings are explained in terms of quenching of Auger-free luminescence (cross luminescence) by self-trapped exciton via Förster mechanism energy transfer.

Subjects :: Condensed Matter::Materials Science
Condensed Matter::Other
Physics::Atomic and Molecular Clusters
Письма редактору
Physics::Optics

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