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High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature
- Publication Year :
- 1997
- Publisher :
- Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України, 1997.
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Abstract
- The effect of VUV undulator excitation intensity on the emission shape and decay time of BaF₂ crystal at low temperature has been observed. The findings are explained in terms of quenching of Auger-free luminescence (cross luminescence) by self-trapped exciton via Förster mechanism energy transfer.
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.od......1456..410281a8beb291d83383cae5e01de407