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Compact model characteristics for generic MIS-HEMTs
- Publication Year :
- 2014
-
Abstract
- III-V channel field-effect transistors (FETs), such as metal–insulator–semiconductor high electron-mobility transistors (MIS-HEMTs), have emerged as promising candidates for future generation high-frequency, high-voltage, and high-power applications. Development of a compact model for generic HEMTs in III-V/Si co-integrated hybrid circuit design is becoming an urgent need for semiconductor industry. This paper presents device characteristics as modeled by the compact model (Xsim) for generic MIS-HEMTs. The model is based on unified regional modeling (URM) of the 2-dimensional electron gas (2DEG) charge density, including the two lowest sub-bands of the triangular well in the strong-inversion region, and extending to the moderate-inversion and subthreshold regions in a single-piece formulation. The 2DEG charge density model is adopted in the surface-potential-based current/charge model for conventional bulk/SOI/multigate MOSFETs, which makes it compatible and scalable for future III-V/Si co-integrated technologies. HEMT-specific features are also discussed, such as nonlinear source/drain access resistances, current-collapse, self-heating, parallel-channel, and quasi-ballistic effects. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.od......1392..6760d3ad1e59dff2356200eeb0971827