MoO₃-MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics

The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO3–MoS2 are successfully synthesized on SiO2/Si substrates via one-step chemical vapor deposition process. The vertical MoO3–MoS2 heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO3–MoS2 heterostructures presents responsivity of 5.41 × 103 A W−1, detectivity of 0.89 × 1010 Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO3–MoS2 vertical heterostructures for electronic and optoelectronic applications. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) This work was supported by the National Research Foundation–Competitive Research Program of Singapore NRF-CRP21-2018-0007 and CRP22- 2019-0060, MOE Tier 2 MOE2017-T2-2-136, Tier 3 MOE2018-T3-1-002, and A∗ Star QTE programme. The National Natural Science Foundation of China (Grants 61974120 and 61904148), the Key Program for International Science and Technology Cooperation Project of Shaanxi Province (Grants 2018KWZ08 and 2019KW-029), the National Key Research and Development Program of China (2019YFC1520904), the Natural Science Foundation of Shaanxi Province (Grants 2017JM5135 and 2018JM6046) and the Foundation of the Education Department of Shaanxi Province (Grans 18JK0772 and 18JK0780), the Key Research and Development Program of Shaanxi Province (2018GY-025).