GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power

MLA

Rattunde, M., et al. GaSb-Based 2.X Μm Quantum-Well Diode Lasers with Low Beam Divergence and High Output Power. Jan. 2006. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.od.......610..8875d50838fabb15347d810463cce6a7&authtype=sso&custid=ns315887.

APA

Rattunde, M., Schmitz, J., Kaufel, G., Kelemen, M. T., Weber, J., & Wagner, J. (2006). GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power.

Chicago

Rattunde, M., J. Schmitz, G. Kaufel, M.T. Kelemen, J. Weber, and J. Wagner. 2006. “GaSb-Based 2.X Μm Quantum-Well Diode Lasers with Low Beam Divergence and High Output Power,” January. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.od.......610..8875d50838fabb15347d810463cce6a7&authtype=sso&custid=ns315887.