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Defeitos superficiais em 2H-WS2 observados por microscopia de tunelamento
- Source :
- Química Nova, Volume: 21, Issue: 1, Pages: 10-5, Published: FEB 1998
- Publication Year :
- 1998
- Publisher :
- Sociedade Brasileira de QuĂmica, 1998.
-
Abstract
- Scanning tunnelling microscopy (STM) was used to characterise the basal surface of fresh cleaved crystals of 2H-WS2. Although no impurity or stacking faults could be detected by X-ray diffraction, STM images obtained with negative bias voltage showed two kinds of defects. These defects were attributed to an iodine derivative used as transport agent. In a flat surface free of defects, an image with atomic resolution was achieved with sulphur distances and angles as expected for hexagonal symmetry of 2H-WS2.
- Subjects :
- tungsten disulphide
catalysis
scanning tunnelling microscopy
Subjects
Details
- Language :
- Portuguese
- Database :
- OpenAIRE
- Journal :
- Química Nova, Volume: 21, Issue: 1, Pages: 10-5, Published: FEB 1998
- Accession number :
- edsair.od.......608..6a4ca8125ba7e4cda1185a7da6ed26de