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Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

Authors :
Hayne, Manus
USHER, A
HARRIS, J J
FOXON, C T
Publication Year :
1992

Abstract

Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.od.......201..464879be9bd0c3bcda20201a448fc755
Full Text :
https://doi.org/10.1103/PhysRevB.46.9515