Safety factor profile requirements for electron ITB formation in TCV

Authors :: Goodman, T. P.
Behn, R.
Camenen, Y.
Coda, S.
Fable, E.
Henderson, M. A.
Nikkola, P.
Rossel, J.
Sauter, O.
Scarabosio, A.
Zucca, C.
Alberti, S.
Amorim, P.
Andrebe, Y.
Appert, K.
Arnoux, G.
Bortolon, A.
Bottino, A.
Chavan, R.
Condrea, I.
Droz, E.
Duval, B. P.
Etienne, P.
Fasel, D.
Fasoli, A.
Gulejova, B.
Hogge, J. P.
Horacek, J.
Isoz, P. F.
Joye, B.
Karpushov, A.
Kim, S. H.
Klimanov, I.
Lavanchy, P.
Lister, J. B.
Llobet, X.
Madeira, T.
Magnin, J. C.
Marinoni, A.
Marletaz, B.
Marmillod, P.
Martin, Y.
Martynov, A.
Maslov, M.
Mayor, J. M.
Moret, J. M.
Muck, A.
Paris, P. J.
Pavlov, I.
Perez, A.
Pitts, R. A.
Pochelon, A.
Porte, L.
Schlatter, C.
Schombourg, K.
Shidara, H.
Siegrist, M.
Siravo, U.
Sushkov, A. V.
Tonetti, G.
Tran, M. Q.
Weisen, H.
Wischmeier, M.
Zabolotsky, A.
Zhuang, G.
Zhuchkova, A.
Abstract: On the Tokamak a Configuration Variable (TCV), electron internal transport barriers (eITBs) can be formed during a gradual evolution from a centrally peaked to a hollow current profile while all external actuators are held constant. The formation occurs rapidly (

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