Review of low-frequency noise in bipolars over the last decades

Authors :: Vandamme, L.K.J.
Trefan, G.
Zampardi, P.
Shott, J.
Burghartz, J.
Integrated Circuits
Source :: IEEE Proceedings of the BCTM, Bipolar/BiCMOS Circuits and Technology Meeting, 68-73, STARTPAGE=68;ENDPAGE=73;TITLE=IEEE Proceedings of the BCTM, Bipolar/BiCMOS Circuits and Technology Meeting
Publication Year :: 2001
Publisher :: Institute of Electrical and Electronics Engineers, 2001.
Abstract: Experimental studies on low frequency noise in bipolar junction transistors (BJT) including polysilicon emitter, hetero-junction transistors (HBTs) and SiGe HBTs are reviewed. The validity of a new empirical relation between the 1/f noise corner frequency f/sub c/ (the frequency where the 1/f noise and shot noise are equal) and the cutoff frequency f/sub T/ is investigated. The coherence-method to investigate the most dominant low-frequency noise source in the equivalent circuit is described.

Language :: English
Database :: OpenAIRE
Journal :: IEEE Proceedings of the BCTM, Bipolar/BiCMOS Circuits and Technology Meeting, 68-73, STARTPAGE=68;ENDPAGE=73;TITLE=IEEE Proceedings of the BCTM, Bipolar/BiCMOS Circuits and Technology Meeting
Accession number :: edsair.narcis........c0cd09acd5328b5a3f3e51eec77d996b

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