The mechanisms for linear polarization loss of in-plane photoluminescence of InGaAs/GaAs quantum well and quantum dot structures

The mechanisms for linear polarization loss of photoluminescence from quantum wells and quantum dots in InGaAs/GaAs structures observed from cleavages have been investigated. It is found that the mechanisms for polarization loss of in-plane photoluminescence are different for OD and 2D hole states. It is shown that the potential energy asymmetry in the InGaAs layer plays an important role in the loss of the photoluminescence polarization from quantum well.