Study for electron-hole plasma on semiconductor surface at mid-infrared region

Although semiconductor is a good transparent material for the radiation with the wavelength from mid to far infrared, it becomes highly reflective when the electron-hole plasma is formed on the surface by irradiating the femto- or picosecond laser pulse. Thus, it is possible to use as a reflective switch with high-speed response for the radiation of mid to far infrared range. In this project, we will reveal the reflective characteristics and dynamics of the plasma switch for the mid infrared range at the KU-FEL. At present we are designing the optics and layout for the experiment and making the comparison with the experimental results at the far infrared range. We will show the design of optics for the experiment at KU-FEL and the discussion for the characteristics of the plasma switch at the mid infrared range deduced from the results at the far infrared range.
The 11th International Symposium of Advanced Energy Science