Etching of high-k dielectric HfO2 films in BCl3-containing plasmas enhanced with O-2 addition

Authors :: Kitagawa, T
Nakamura, K
Osari, K
Takahashi, K
Ono, K
Oosawa, M
Hasaka, S
Inoue, M
Source :: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 45(8-11):L297-L300
Publication Year :: 2006
Publisher :: INST PURE APPLIED PHYSICS, 2006.

Subjects :: O-2 addition
plasma cleaning
BCl3 plasma
plasma etching
chlorine-containing plasma
high-k dielectrics
HfO2

Language :: English
ISSN :: 00214922
Volume :: 45
Issue :: 8-11
Database :: OpenAIRE
Journal :: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Accession number :: edsair.jairo.........caa19dc99dc57d36c8d88fe50f7fbeef

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