Back to Search
Start Over
[ 183] D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, 'Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer', Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011
- Source :
- Japanese Journal of Applied Physics. 50(No. 10)
- Publication Year :
- 2011
Details
- Language :
- English
- Volume :
- 50
- Issue :
- No. 10
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.jairo.........91991124eb087fe5dc54bf2c160978e1