Nanoscale Fabrication and Device Applications of lnAs-based Heterostructures using Atomic-Force Microscope

We describe nanofabrication processes developed for the fabrication of InAs/AIGaSb heterostructures using atomic-force-microscope (AFM) oxidation and applications to the fabrication of nanoscale devices such as single-electron transistors. Oxidation processes were developed for GaSb, GaSb/AlSb, and InAs layers. We demonstrate that our AFM oxidation processes are simple and useful by showing each fabrication process and corresponding device structure and characteristics.