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Ion Synthesis of SiC and Its Instability at High Temperatures

Authors :
Nussupov, Kair Kh.
Beisenkhanov, Nurzhan B.
Source :
Physics and Technology of Silicon Carbide Devices
Publication Year :
2012
Publisher :
InTech, 2012.

Details

Language :
English
Database :
OpenAIRE
Journal :
Physics and Technology of Silicon Carbide Devices
Accession number :
edsair.intech........0dbcb5b6b1a6dd88a5b5e59f1f4ed14c

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