Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil

In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature was limited to less than lôS'C in order to ensure good overiay accuracy (