Cite
Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n plus InAs/p plus GaSb nanowire tunneling devices
MLA
S. El Kazzi, et al. Dislocations Behavior in Highly Mismatched III-Sb Growth and Their Impact on the Fabrication of Top-down n plus InAs/p plus GaSb Nanowire Tunneling Devices. Nov. 2018. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....fe5411296b52d3dcefa17ce36189f50f&authtype=sso&custid=ns315887.
APA
S. El Kazzi, Nadine Collaert, J.A. del Alamo, Clement Merckling, B. Hsu, Paola Favia, Wei Lu, & A. Alian. (2018). Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n plus InAs/p plus GaSb nanowire tunneling devices.
Chicago
S. El Kazzi, Nadine Collaert, J.A. del Alamo, Clement Merckling, B. Hsu, Paola Favia, Wei Lu, and A. Alian. 2018. “Dislocations Behavior in Highly Mismatched III-Sb Growth and Their Impact on the Fabrication of Top-down n plus InAs/p plus GaSb Nanowire Tunneling Devices,” November. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....fe5411296b52d3dcefa17ce36189f50f&authtype=sso&custid=ns315887.