Electrochemical layer by layer growth and characterization of copper sulfur thin films on Ag(111)

Authors :: Claudio Bianchini
Alessandro Lavacchi
F. Di Benedetto
Francesco Vizza
Silvano Bellandi
Ilaria Bencistà
Massimo Innocenti
Maria Luisa Foresti
Source :: Electrochimica acta 58 (2011): 599–605. doi:10.1016/j.electacta.2011.10.004, info:cnr-pdr/source/autori:Innocenti M., Bencistà I., Bellandi S., Bianchini C., Di Benedetto F., Lavacchi A., F. Vizza, Foresti M.L./titolo:Electrochemistry layer by layer growth and characterization of copper sulur thin films on Ag(111)/doi:10.1016%2Fj.electacta.2011.10.004/rivista:Electrochimica acta/anno:2011/pagina_da:599/pagina_a:605/intervallo_pagine:599–605/volume:58
Publication Year :: 2011
Publisher :: Elsevier BV, 2011.
Abstract: Copper sulfide (CuS) thin films were grown on a single crystal Ag(1 1 1) substrate by Electrochemical Atomic Layer Deposition (ECALD) method, i.e., by alternated surface limited deposition of copper and sulfur. A detailed investigation of deposition of Cu on S allowed to find the best conditions for copper deposition. The electrochemical characterization of deposits obtained with different deposition cycles suggests a 1:1 stoichiometric ratio between Cu and S corresponding to Cu monosulfide. The compositional analysis was performed by X-rays Photoelectron Spectroscopy (XPS), and the morphological was investigated by Atomic Force Microscopy (AFM) for deposits formed with 20 ECALD cycles.

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